FIB (Focused Ion Beam) technology is a technology that uses focused ion beams to process and analyze materials at the nanoscale. The core principle is to precisely etch, deposit or image the surface of a sample by means of a high-energy ion beam. The following are the main principles of FIB:

【 Ion source 】

At the heart of FIB systems are ion sources, typically using liquid metal ion sources (LMIS) such as gallium (Ga) ions. Gallium ion is widely used because of its low melting point and good focusing properties. The ion source uses an electric field to accelerate and focus metal ions into beams.

【 Ion Beam Focusing and Scanning 】

The ion beam is focused into a nanoscale beam spot by an electromagnetic lens system, and the beam spot is controlled to move on the sample surface by a scanning system. The scanning system can precisely control the position of the ion beam to achieve high-precision machining and imaging.

【 Application mode 】

FIB technology mainly has the following application modes:

Etching: Removal of material by ion beam for preparation of nanostructures or sample slices.

Deposition: Deposition of material in a specific area through chemical reactions for use in repairing electrical circuits or building nanostructures.

Imaging: High resolution imaging using secondary electron or ion signals generated by the ion beam.

Sample preparation: For transmission electron microscopy (TEM), ultra-thin samples are cut by ion beam.

Advantages:

1. High precision processing capability (nanometer level).

2. Versatility (etching, deposition, imaging, etc.).

3. Suitable for a variety of materials (metal, semiconductor, insulator, etc.).

Limitations:

1. Ion beam may cause damage to the sample.

2. The processing speed is slow, not suitable for mass production.

3. High equipment cost and complex operation.

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